參數(shù)資料
型號(hào): MRF7S21210HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁(yè)數(shù): 15/15頁(yè)
文件大?。?/td> 458K
代理商: MRF7S21210HSR3
MRF7S21210HR3 MRF7S21210HSR3
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
20
10
22
0
60
50
40
30
20
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
20
18
10
100
300
10
60
ACPR
(dBc)
16
14
12
0
30
40
50
Figure 10. Broadband Frequency Response
0
20
1750
f, FREQUENCY (MHz)
VDD = 28 Vdc
IDQ = 1400 mA
12
8
1850
S21
(dB)
16
S21
1950
2050
2150
2250
2350
2450
2550
S11
20
0
4
8
12
16
S1
1(dB)
4
TC = 30_C
85
_C
Gps
ηD
30
_C
25
_C
VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz
SingleCarrier WCDMA, 3.84 MHz
Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
30
_C
ACPR
25
_C
85
_C
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 63 W Avg., and ηD = 29%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
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