參數(shù)資料
型號: MRF7S21170HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁數(shù): 8/17頁
文件大小: 797K
代理商: MRF7S21170HSR3
16
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
REVISION HISTORY (continued)
Revision
Date
Description
5
Apr. 2008
Corrected On Characteristics table ID value for VGS(th) from 270 μAdc to 372 μAdc and VDS(on) from
2.7 Adc to 3.72 Adc; tightened VGS(th) minimum and maximum values to match production
test values, p. 2
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 4
Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent production test signal, p. 8
6
Mar. 2011
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 15
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相關代理商/技術參數(shù)
參數(shù)描述
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