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參數(shù)資料
| 型號： | MRF7S21170HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 797K |
| 代理商： | MRF7S21170HSR3 |
MRF7S21170HR3 MRF7S21170HSR3
15
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2006
Initial Release of Data Sheet
1
June 2006
Added Class C to description of parts, pg. 1
Changeded “≥” to “--” in the Device Output Signal Par bullet, pg. 1
Changed typ value from ±9 to 18 in Part--to--Part Phase Variation characteristic description in Table 4, Typical
Performances, p. 2
Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7
2
Aug. 2006
Added Greater Negative Source bullet to Features section, p. 1
Corrected Fig. 14, Single--Carrier W--CDMA Spectrum, to 3.84 MHz, p. 7
3
Sept. 2006
Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
Added “Insertion” to Part--to--Part Phase Variation characteristic description in Table 4, Typical Performances,
p. 2
Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
Performances, p. 2
Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
and Values, p. 3
Added Figure 10, Digital Predistortion Correction, p. 6
Corrected Fig. 15, Single--Carrier W--CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
4
May 2007
Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard, p. 1
Added “Optimized for Doherty Applications” bullet to Features section, p. 1
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q),
and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2
Updated verbiage in Typical Performances table, p. 3
Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers
and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 7
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 8
Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test Signal, updated
to include output power level at functional test, p. 8
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21170HSR5 | 功能描述:射頻MOSFET電源晶體管 2.1GHZ HV7 WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21210HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21210HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21210HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21210HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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