參數(shù)資料
型號: MRF7S21170HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁數(shù): 11/17頁
文件大?。?/td> 797K
代理商: MRF7S21170HSR3
MRF7S21170HR3 MRF7S21170HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, 2110--2170 MHz Bandwidth
Video Bandwidth @ 170 W PEP Pout whereIM3 = --30dBc
(Tone Spacing from 100 kHz to VBW)
IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
25
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =50 W Avg.
GF
0.4
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@Pout = 170 W CW
Φ
1.95
°
Average Group Delay @ Pout = 170 W CW, f = 2140 MHz
Delay
1.7
ns
Part--to--Part Insertion Phase Variation @ Pout = 170 W CW
f = 2140 MHz, Six Sigma Window
Φ
18
°
Gain Variation over Temperature
(--30°Cto+85°C)
G
0.015
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
P1dB
0.01
dB/°C
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