參數(shù)資料
型號(hào): MRF6V12250HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN
文件頁(yè)數(shù): 8/13頁(yè)
文件大?。?/td> 1274K
代理商: MRF6V12250HSR3
4
RF Device Data
Freescale Semiconductor
MRF6V12250HR3 MRF6V12250HSR3
Figure 2. MRF6V12250HR3(HSR3) Test Circuit Component Layout
R4
CUT
OUT
A
REA
C8
C7
R3
C6
C5
C1
C4
C3
R2
C2
C11
C10
C9
C12
C13
C14
C15
MRF6V12250H
Rev. 0
R1
相關(guān)PDF資料
PDF描述
MRF6V12500HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6V12500HR5 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6V12500HSR5 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6V12500HSR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6V13250HR3 L BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6V12250HSR5 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6V12500H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6V12500HR3 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6V12500HR3_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V12500HR5 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray