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參數(shù)資料
| 型號： | MRF6V12250HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件頁數(shù)： | 13/13頁 |
| 文件大小： | 1274K |
| 代理商： | MRF6V12250HSR3 |
MRF6V12250HR3 MRF6V12250HSR3
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 960--1215 MHz
16
26
50
20
70
100
50
40
Pout, OUTPUT POWER (WATTS) PULSED
Figure 14. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
22
350
f = 1215 MHz
30
20
18
VDD =50 Vdc
IDQ = 100 mA
Pulse Width = 128 μsec
Duty Cycle = 10%
Gps
24
0
150
200
250
300
60
1150 MHz
1030 MHz
960 MHz
1215 MHz 1150 MHz
1030 MHz
960 MHz
Figure 15. Broadband Performance @ Pout = 250 Watts Peak
11
21
950
f, FREQUENCY (MHz)
15
13
975
17
1000 1025 1050 1075 1100 1125
1225
--20
68
64
60
0
--5
G
ps
,P
OWER
GAIN
(d
B)
12
14
16
18
62
58
--10
--15
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
IRL,
INPUT
RET
URN
LO
SS
(d
B)
VDD =50 Vdc,IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.)
Pulse Width = 128 μsec, Duty Cycle = 10%
Gps
ηD
IRL
19
20
66
1150 1175 1200
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| MRF6V12500HSR5 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V12500HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V12250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12500H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6V12500HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12500HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V12500HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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