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參數(shù)資料
| 型號(hào)： | MRF6V12250HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件頁(yè)數(shù)： | 4/13頁(yè) |
| 文件大小： | 1274K |
| 代理商： | MRF6V12250HSR3 |
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12
RF Device Data
Freescale Semiconductor
MRF6V12250HR3 MRF6V12250HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2009
Initial Release of Data Sheet
1
July 2009
Updated Typical Broadband Performance bullet to include VDD,IDQ and Pulsed information. Provided
specific values for Power Gain and Drain Efficiency, p. 1
Added Typical Performance table for 960--1215 MHz application, p. 2
Changed “EKMG630ELL471MK25S” part number to “MCGPA63V477M13X26--RH”, Table 5, Test Circuit
Component Designations and Values, p. 3
Added Fig. 5, Safe Operating Area, p. 5
Added Fig. 13, Test Circuit Component Layout -- 960--1215 MHz and Table 6, Test Circuit Component
Designations and Values -- 960--1215 MHz, p. 8
Added Fig. 14, Power Gain and Drain Efficiency versus Output Power -- 960--1215 MHz, p. 9
Added Fig 15, Broadband Performance @ Pout = 250 Watts Peak -- 960--1215 MHz, p. 9
Added Fig. 16, Series Equivalent Source and Load Impedance -- 960--1215 MHz, p. 10
2
Apr. 2010
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Reporting of pulsed thermal data now shown using the ZθJC symbol,p.1
Added RF High Power Model availability to Product Software, p. 12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6V12500HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V12500HR5 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V12500HSR5 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V12500HSR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6V13250HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6V12250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12500H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6V12500HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12500HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V12500HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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