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參數(shù)資料
| 型號： | MRF6V12250HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 1274K |
| 代理商： | MRF6V12250HSR3 |
MRF6V12250HR3 MRF6V12250HSR3
7
RF Device Data
Freescale Semiconductor
Zo =5
Zload
Zsource
f = 1030 MHz
VDD =50 Vdc,IDQ = 100 mA, Pout = 275 W Peak
f
MHz
Zsource
Zload
1030
2.30 -- j3.51
4.0 -- j2.14
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 12. Series Equivalent Source and Load Impedance
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF6V12250HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12500H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6V12500HR3 | 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6V12500HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V12500HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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