參數(shù)資料
型號(hào)： MRF6S20010NR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝： ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN
文件頁數(shù)： 21/27頁
文件大小： 687K
代理商： MRF6S20010NR1
MRF6S20010NR1 MRF6S20010GNR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical 2-Carrier W-CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout =
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
—
15.5
—
dB
Drain Efficiency
ηD
—
15
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW
GF
—
0.3
—
dB
Intermodulation Distortion
IM3
—
-47
—
dBc
Adjacent Channel Power Ratio
ACPR
—
-49
—
dBc
Typical N-CDMA Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg.,
1930 MHz<Frequency<1990 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
—
15.5
—
dB
Drain Efficiency
ηD
—
16
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW
GF
—
0.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
-60
—
dBc
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg.,
1805-1880 MHz, EDGE Modulation
Power Gain
Gps
—
16
—
dB
Drain Efficiency
ηD
—
33
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 4 W CW
GF
—
0.3
—
dB
Error Vector Magnitude
EVM
—
1.3
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
-60
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-70
—
dBc
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S20010NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR3 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21050LR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR5 功能描述:射頻MOSFET電源晶體管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S21050LS 制造商:Freescale Semiconductor 功能描述:
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