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參數(shù)資料
| 型號： | MRF650 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 316-01, 4 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 154K |
| 代理商： | MRF650 |
MRF650
4
MOTOROLA RF DEVICE DATA
Figure 7. Schematic of Broadband Demonstration Amplifier (3)
B1, B2 — Ferrite Bead Fair Rite Products Corp.
B3 — Ferrite Bead Fair Rite Products Corp.
C2, C11 — 820 pF, 5%
C3, C10 — 91 pF, 5%, Mica, SAHA 3HS0006–91
C1, C12 — 220 pF, 5%, Murata Erie
C4 — 9.1 pF, 5%, Murata Erie
C5, C6, C7, C8 — 43 pF, 5%, Mica SAHA 3HS0006–43
C9 — 10 pF, 5%, Murata Erie
C13 — 10
μ
F, Electrolytic, 50 V, Panasonic
L1 — 7 Turns, 24 AWG, ID Dia. 0.116
″
L2 — 5 Turns, 18 AWG, ID Dia. 0.165
″
N1, N2 — SMA Flange Mount, Omni–Spectra
2052–1618–02
R1, R2, R3, R4 — 39 Ohm 1/8 W 5% Rohm
TL1 — Zo = 50 Ohm
TL2 — Zo = 50 Ohm
TL3 — Zo = 50 Ohm
TL4 — See Photomaster
TL5 — Zo = 50 Ohm
TL6 — See Photomaster
TL7 — See Photomaster
TL8 — See Photomaster
TL9 — See Photomaster
TL10 — Zo = 50 Ohm
TL11 — See Photomaster
TL12 — Zo = 50 Ohm
TL13 — Zo = 50 Ohm
TL14 — Zo = 50 Ohm
Board Material: 1/16
″
G10,
ε
r = 4.5
Board Material:
2 oz. Cu Clad Both Sides
PERFORMANCE CHARACTERISTICS OF
BROADBAND DEMONSTRATION AMPLIFIER
Figure 8. Output Power versus Input Power
Figure 9. Po,
η
c and VSWR versus Frequency
(3) Detailed design and performance information available from Motorola upon request.
(440–512 MHz)
+12.5 Vdc
N1
C1
C12
TL1
N2
TL2
TL3
TL5
TL6
TL7
C4
C6
C8
C9
TL4
L1
B1
C2
C3
C5
D.U.T.
C7
TL8
TL10
TL12
TL13
TL9
TL14
C10
B2
C11
B3
C13
R1, R2, R3, R4
L2
TL11
o
Pin, INPUT POWER (WATTS)
10
80
60
40
20
0
5
90
70
50
30
10
100
0
15
20
25
30
35
40
f = 400
MHz
VCC = 12.5 Vdc
o
f, FREQUENCY (MHz)
80
60
40
20
0
430
70
50
30
10
440
460
480
500
520
450
470
490
510
530
c
η
V
1.0:1
1.5:1
2.0:1
60
70
80
Po
η
c
VSWR
Pin = 15 W
VCC = 12.5 V
512 MHz
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| MRF6522-70R3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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