參數(shù)資料
型號(hào)： MRF650
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF POWER TRANSISTOR NPN SILICON
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CASE 316-01, 4 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 154K
代理商： MRF650
MRF650
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture. See Figure 1.)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz)
Input Return Loss
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470, 512 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz)
Output Mismatch Stress
(VCC = 15.5 V, 2.0 dB Overdrive, f = 470 MHz,
VSWR = 20:1, All Phase Angles) (1)
Gpe
5.2
6.1
—
dB
Gpe
5.0
5.9
—
dB
IRL
10
15
—
dB
η
55
65
—
%
—
50
60
—
%
ψ
(2)
No Degradation in Output Power
NOTES:
1. Pin = 2.0 dB above drive requirement for 50 W output at 12.5 Vdc.
2.
ψ
= Mismatch stress factor — the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress
test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles.
Figure 1. 440 to 512 MHz Broadband Test Circuit Schematic
B1, B8 — Ferrite Bead Ferroxcube VK200 20–4B
B2, B3, B4, B5, B6, B7 — Ferrite Bead Ferroxcube #56–590–3B
C1, C8 — 10
μ
F, 25 V, 25%, Electrolytic, ECS TE–1204
C2, C7 — 1000 pF, Chip Cap, 5%, ATC 100B102JC50
C3, C6 — 91 pF, 5%, Mica, SAHA 3HS0006–91
C4, C5, C12, C13 — 36 pF, 5%, SAHA 3HS0006–36
C9, C16 — 220 pF, Chip Cap, 5%, ATC 100B221JC200
C10, C11, C15 — 0.8–10 pF, Variable, Johanson JMC501 PG26J200
C14 — 1.0–20 pF, Variable, Johanson JMC5501 PG26J200
L1, L2 — 3 Turns, 18 AWG, 0.19
″
ID — Total Length 3.5
″
N1, N2 — N Coaxial Conn., Omni–Spectra 3052–1648–10
R1, R2 — 10 Ohm, 10%, 1.0 W, Carbon, RCA 831010
TL1, TL12 — Zo = 50 Ohm
TL2 — See Photomaster
TL3 — See Photomaster
TL4 — See Photomaster
TL5 — See Photomaster
TL6 — See Photomaster
TL7 — See Photomaster
TL8 — See Photomaster
TL9 — See Photomaster
TL10 — See Photomaster
TL11 — See Photomaster
Transmission Line Boards: 1/16
″
Glass–Teflon
Transmission Line Boards:
Keene GX–0600–55–22
Transmission Line Boards:
2 oz. Cu Clad Both Sides
Transmission Line Boards:
ε
r = 2.55
Bias Boards: 1/16
″
G10 or Equivalent
Bias Boards:
2 oz. Cu Clad Double Sided
VRE
PORT
RF INPUT
50
RF
OUTPUT
50
+12.5 Vdc
R1
B1
B2
B3
SOCKET
B6
B7
B8
R2
+
+
C1
C2
C3
B4
C4
C5
B5
C6
C7
C8
TL1
C9
TL3
TL4
TL5
TL6
D.U.T.
C10
TL2
N1
N2
C11
C12
C13
C14
C15
TL11
TL12
TL7
TL8
TL9
TL10
C16
L1
L2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF652 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
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