- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371145 > MRF650 (MOTOROLA INC) RF POWER TRANSISTOR NPN SILICON PDF資料下載
參數(shù)資料
| 型號： | MRF650 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 316-01, 4 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 154K |
| 代理商： | MRF650 |
3
MRF650
MOTOROLA RF DEVICE DATA
P
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage
Figure 5. Broadband Performance for Po = 50 W
Figure 6. Input and Output Impedance Normalized to 10 Ohms
Circuit Tuned for Maximum Gain @ Po = 50 W
Pin, INPUT POWER (WATTS)
0
8
80
60
40
20
0
4
f = 400
470 MHz
512 MHz
520 MHz
90
70
50
30
10
12
16
20
24
28
32
VCC = 12.5 Vdc
f, FREQUENCY (MHz)
420
80
60
40
20
0
400
70
50
30
10
440
460
480
500
520
15 W
13 W
11 W
VCC, SUPPLY VOLTAGE (VOLTS)
8
80
60
40
20
90
70
50
30
10
12
16
7
9
10
11
13
14
15
17
c
η
V
P
f, FREQUENCY (MHz)
16
14
440
460
480
500
520
12
10
8
6
4
2
0
1.0:1
1.5:1
2.0:1
60
70
80
90
Po = 50 W
VCC = 12.5 Vdc
Pin
η
c
VSWR
P
P
VCC = 12.5 Vdc
Pin = 17 W
15 W
13 W
11 W
f = 512 MHz
Pin = 17 W
f = 400 MHz
512
440
f = 400 MHz
520
440
ZOL*
Zin
470
512
520
470
f
(MHz)
Zin
ZOL*
400
440
470
512
520
0.7 + j2.8
0.7 + j3.2
0.8 + j3.3
0.8 + j3.2
0.7 + j3.0
1.4 + j2.3
1.1 + j2.6
0.8 + j2.7
0.7 + j2.9
0.6 + j3.0
Pout = 50 W, VCC = 12.5 Vdc
TUNED FOR MAXIMUM
GAIN AT Po = 50 W
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device operates at a given
ZOL* =
output power, voltage and frequency.
NOTE: Zin & ZOL* are given from base–to–base
and collector–to–collector respectively.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6522-70R3 | RF MOSFETS(RF MOS場效應(yīng)管) |
| MRF652 | RF POWER TRANSISTORS NPN SILICON |
| MRF652S | RF POWER TRANSISTORS NPN SILICON |
| MRF653 | RF POWER TRANSISTOR NPN SILICON |
| MRF654 | RF POWER TRANSISTOR NPN SILICON |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF652 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MRF6522-70 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6522-70R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522--70R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6522-70R3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。