參數(shù)資料
型號(hào)： MRF653
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： RF POWER TRANSISTOR NPN SILICON
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 163K
代理商： MRF653
1
MRF653
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 10 W
Gain = 8.0 dB (Typ)
Efficiency = 65% (Typ)
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16.5
Vdc
Collector–Base Voltage
38
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
2.75
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
44
0.25
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
°
C
Operating Junction Temperature
200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
4.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
Load Mismatch Stress
(VCC = 16 Vdc, f = 512 MHz, Pin (1) = 2.6 W,
VSWR = 20:1, All Phase Angles)
Symbol
Min
Typ
Max
Unit
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
16.5
—
—
Vdc
38
—
—
Vdc
4.0
—
—
Vdc
—
—
5.0
mAdc
hFE
20
—
120
—
Cob
—
22
28
pF
Gpe
7.0
8.0
—
dB
η
c
55
65
—
%
ψ
No Degradation in Output Power
NOTE:
1. Pin = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc.
Order this document
by MRF653/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
REV 8
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參數(shù)描述
MRF654 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON
MRF658 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON
MRF6P18190HR5 功能描述:射頻MOSFET電源晶體管 HV6 1.8GHZ 44W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P18190HR6 功能描述:射頻MOSFET電源晶體管 HV6 1.8GHZ 44W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6P21190HR5 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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