參數(shù)資料
型號: MRF5S9070NR1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power Field Effect Transistors
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝: PLASTIC, CASE 1265-08, 2 PIN
文件頁數(shù): 11/12頁
文件大?。?/td> 450K
代理商: MRF5S9070NR1
MRF5S9070NR1 MRF5S9070MR1
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
TO-270-2
PLASTIC
CASE 1265-08
ISSUE G
DATUM
PLANE
BOTTOM VIEW
A1
2X
E4
E
D1
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
aaa
D
A
M
aaa
D
2X
b1
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS
D1" AND
E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
D1" AND
E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE
J" ONLY.
8. DIMENSIONS
D" AND
E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS
D" AND
E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE D.
NOTE 7
c1
F
ZONE J
E2
E5
A
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
MIN
.078
.039
.040
.416
.378
.290
.016
.436
.238
.066
.150
.058
.231
MAX
.082
.043
.042
.424
.382
.320
.024
.444
.242
.074
.180
.066
.235
MIN
1.98
0.99
1.02
10.57
9.60
7.37
0.41
11.07
6.04
1.68
3.81
1.47
5.87
MAX
2.08
1.09
1.07
10.77
9.70
8.13
0.61
11.28
6.15
1.88
4.57
1.68
5.97
MILLIMETERS
INCHES
F
b1
c1
aaa
.193
.007
.199
.011
4.90
0.18
5.06
0.28
.025 BSC
.004
0.64 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
E5
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