- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371145 > MRF6409 (MOTOROLA INC) NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管) PDF資料下載
參數(shù)資料
| 型號： | MRF6409 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 319-07, 6 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 273K |
| 代理商： | MRF6409 |
1
MRF6409
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
The MRF6409 is designed for GSM base stations applications. It incorpo-
rates high value emitter ballast resistors, gold metallizations and offers a high
degree of reliability and ruggedness.
To be used in Class AB
Specified 26 Volts, 960 MHz Characteristics
Output Power — 20 Watts CW
Gain — 11 dB Typ
Efficiency — 60% Typ
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
24
Vdc
Collector–Emitter Voltage
55
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector–Current — Continuous
5.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
45
0.26
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
3.8
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IB = 5.0 mAdc, IC =0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Collector–Cutoff Current
(VCE = 30 Vdc, VBE = 0)
(1) Thermal resistance is determined under specified RF operating condition.
V(BR)CEO
24
30
—
Vdc
V(BR)EBO
4.0
5.0
—
Vdc
V(BR)CES
55
60
—
Vdc
ICES
—
—
6.0
mA
Order this document
by MRF6409/D
SEMICONDUCTOR TECHNICAL DATA
20 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6414PHT | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| MRF641 | RF POWER TRANSISTOR NPN SILICON |
| MRF644 | RF POWER TRANSISTOR NPN SILICON |
| MRF650 | RF POWER TRANSISTOR NPN SILICON |
| MRF6522-70R3 | RF MOSFETS(RF MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF641 | 制造商:Motorola 功能描述:641, TRANSISTOR |
| MRF6414 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF6414PHT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon RF Power Transistor |
| MRF644 | 制造商:MOTOROLA 功能描述:5961010973421 |
| MRF646 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。