參數(shù)資料
型號： MPC8360ECVVAJDGA
廠商： Freescale Semiconductor
文件頁數(shù)： 16/102頁
文件大小： 0K
描述： IC MPU POWERQUICC II PRO 740TBGA
標(biāo)準(zhǔn)包裝： 21
系列： MPC83xx
處理器類型： 32-位 MPC83xx PowerQUICC II Pro
速度： 533MHz
電壓： 1.2V
安裝類型： 表面貼裝
封裝/外殼： 740-LBGA
供應(yīng)商設(shè)備封裝： 740-TBGA（37.5x37.5）
包裝： 托盤
配用： MPC8360EA-MDS-PB-ND - KIT APPLICATION DEV 8360 SYSTEM
MPC8360E-RDK-ND - BOARD REFERENCE DESIGN FOR MPC
MPC8360E/MPC8358E PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 5
20
Freescale Semiconductor
DDR and DDR2 SDRAM AC Electrical Characteristics
This table provides the DDR capacitance when GVDD(typ) = 2.5 V.
6.2
DDR and DDR2 SDRAM AC Electrical Characteristics
This section provides the AC electrical characteristics for the DDR and DDR2 SDRAM interface.
6.2.1
DDR and DDR2 SDRAM Input AC Timing Specifications
This table provides the input AC timing specifications for the DDR2 SDRAM interface when GVDD(typ) = 1.8 V.
Input high voltage
VIH
MVREF + 0.18
GVDD + 0.3
V
—
Input low voltage
VIL
–0.3
MVREF – 0.18
V
—
Output leakage current
IOZ
—±10
μA
Output high current (VOUT = 1.95 V)
IOH
–15.2
—
mA
—
Output low current (VOUT = 0.35 V)
IOL
15.2
—
mA
—
MVREF input leakage current
IVREF
—±10
μA—
Input current (0 V
≤VIN ≤OVDD)IIN
—±10
μA—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤V
OUT ≤GVDD.
Table 17. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS
CIO
68
pF
Delta input/output capacitance: DQ, DQS
CDIO
—0.5
pF
Note:
1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25° C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 18. DDR2 SDRAM Input AC Timing Specifications for GVDD(typ) = 1.8 V
At recommended operating conditions with GVDD of 1.8 V ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—MVREF – 0.25
V
—
AC input high voltage
VIH
MVREF + 0.25
—
V
—
Table 16. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V (continued)
Parameter/Condition
Symbol
Min
Max
Unit
Notes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPC8360ECVVAJDHA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
MPC8360ECVVAJFGA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
MPC8360ECVVAJFHA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
MPC8360ECVVALDGA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
MPC8360ECVVALDHA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
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