
Electrical Characteristics
MPC560xS Microcontroller Data Sheet, Rev. 2
Preliminary—Subject to Change Without Notice
Freescale Semiconductor
69
3.16
Flash Memory Electrical Characteristics
3.17
Analog to Digital Converter (ADC) Electrical Characteristics
The device provides a 10-bit Successive Approximation Register (SAR) Analog to Digital Converter.
Table 36. Program and Erase Specifications
Symbol
C
Parameter
Value
Unit
Min
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
change pending device characterization.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Tdwprogram
CC P Double Word (64 bits) program time4
4 Actual hardware programming times. This does not include software overhead.
—22
500
s
T16kpperase
CC P 16 KB block pre-program and erase time
—
500
5000
ms
T32kpperase
CC P 32 KB block pre-program and erase time
—
600
5000
ms
T128kpperase CC P 128 KB block pre-program and erase time
—
1300
7500
ms
Table 37. Flash Module Life
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
P/E
CC C Number of program/erase cycles per
block for 16 Kbyte blocks over the
operating temperature range (TJ)
—
100,000
—
cycles
P/E
CC C Number of program/erase cycles per
block for 32 Kbyte blocks over the
operating temperature range (TJ)
—
10,000
100,0001
1 To be confirmed
cycles
P/E
CC C Number of program/erase cycles per
block for 128 Kbyte blocks over the
operating temperature range (TJ)
—
1,000
Retention CC C Minimum data retention at 85 °C
average ambient temperature2
2 Ambient temperature averaged over duration of application, not to exceed recommended product operating
temperature range.
Blocks with 0–1,000 P/E
cycles
20
—
years
Blocks with 10,000 P/E
cycles
10
—
years
Blocks with 100,000 P/E
cycles
—
years