參數(shù)資料
型號(hào)： MPC5606SEMLQR
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 32-BIT, FLASH, 64 MHz, MICROCONTROLLER, PQFP144
封裝： 20 X 20 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, LQFP-144
文件頁(yè)數(shù)： 44/104頁(yè)
文件大?。?/td> 1729K
代理商： MPC5606SEMLQR
MPC560xS Microcontroller Data Sheet, Rev. 2
Preliminary—Subject to Change Without Notice
Electrical Characteristics
Freescale Semiconductor
44
3.5
Thermal Characteristics
VSSOSC SR C Voltage on VSSOSC (oscillator ground) pin
with respect to VSS
00
V
VLCD
SR C Voltage on VLCD (LCD supply) pin with
respect to VSS
0VDDE_A +0.3
V
TVDD
SR C VDD slope to ensure correct power up
0.25
V/s
TA
SR C Ambient temperature under bias
40
105
°C
TJ
SR C Junction temperature under bias
40
150
°C
1 100 nF capacitance needs to be provided between V
DDA/VSSA pair.
2 Full functionality cannot be guaranteed when voltage drops below 4.5 V. In particular, I/O DC and ADC electrical
characteristics may not be guaranteed below 4.5 V during the voltage drop sequence.
3 200 F capacitance must be connected between V
DDR and VSS12. This is required because of sharp surge due to
external ballast.
4 V
DD12 cannot be used to drive any external component.
5 Each V
DD12/VSS12 supply pair should have a 10 F capacitor. Absolute combined maximum capacitance is 40 F.
6 V
DD refers collectively to I/O voltage supplies, i.e., VDDE_A, VDDE_B, VDDE_C, VDDE_E, VDDMA, VDDMB and VDDMC.
7 100 nF capacitance needs to be provided between each V
DD/VSS pair
8 V
SS refers collectively to I/O voltage supply grounds, i.e., VSSE_A, VSSE_B, VSSE_C, VSSE_E, VSSMA, VSSMB and
VSSMC) unless otherwise noted.
9 V
DDE_C should be the same as VDDA with a 100 mV variation, i.e., VDDE_C = VDDA ±100 mV.
Table 14. LQFP Thermal Characteristics1
1 Thermal characteristics are targets based on simulation that are subject to change per device characterization.
Symbol
C
Parameter
Conditions
Value
Unit
144-pin 176-pin
RθJA
CC D Thermal resistance, junction-to-ambient
natural convection2
Single layer board—1s
50
43
°C/W
CC
Four layer board—2s2p
41
35
°C/W
RθJMA CC D Thermal resistance, junction-to-moving-air
ambient2
@ 200 ft./min., single layer
board—1s
41
35
°C/W
CC
@ 200 ft./min., four layer
board—2s2p
35
30
°C/W
RθJB
CC D Thermal resistance, junction-to-board3
29
24
°C/W
RθJCtop CC D Thermal resistance, junction-to-case
(top)4
10
9
°C/W
Ψ
JT
CC D Junction-to-package top thermal
characterization parameter, natural
convection5
22
°C/W
Table 13. Recommended Operating Conditions (5.0 V) (continued)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Max
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