參數(shù)資料
型號: MP4304
廠商: Toshiba Corporation
英文描述: TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
中文描述: 東芝功率晶體管模塊硅npn型外延式(高增益功率晶體管在1 4)
文件頁數(shù): 4/5頁
文件大小: 140K
代理商: MP4304
MP4304
2002-11-20
4
Collector-emitter voltage V
CE
(V)
Safe Operating Area
C
C
Ambient temperature Ta (°C)
P
T
– Ta
T
T
T
j
– P
T
C
T
j
Total power dissipation P
T
(W)
r
th
– t
w
T
t
Pulse width t
w
(s)
Curves should be applied in thermal limited area. Below
figure show thermal resistance per 1 unit versus pulse
width.
This curve is obtained by using single nonrepetitive pulse
with no heat sink and attached on a circuit board.
0.001
0.01
0.1
1
10
100
1000
(1)
(2)
(3)
(4)
1
10
100
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
0.05
5
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
10
30
50
100
200
0.1
0.3
0.5
1
3
5
10
30
IC max (pulsed)*
10 ms*
VCEO max
1 ms*
100 μs*
0
8
40
2
4
6
80
120
160
200
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(4)
(3)
(2)
(1)
2
4
6
8
0
160
40
80
120
10
0
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Circuit board
(1)
(2) (3) (4)
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