參數(shù)資料
型號(hào)： MP4412
廠商： Toshiba Corporation
英文描述： Silicon N Channel MOS Type (Four L2-pi-MOSV inOne)
中文描述： 硅?頻道馬鞍山類型（四二級(jí)-π- MOSV InOne公司）
文件頁數(shù)： 1/8頁
文件大小： 199K
代理商： MP4412
MP4412
2004-07-01
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L
2
-
π
-MOSV inOne)
MP4412
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (4-device operation)
: P
T
= 28 W (Tc = 25°C)
Low drain-source ON resistance: R
DS (ON)
= 0.17
(typ.)
High forward transfer admittance: |Y
fs
| = 4.5 S (typ.)
Low leakage current: I
GSS
= ±10 μA (max) (V
GS
= ±16 V)
I
DSS
= 100 μA (max) (V
DS
= 100 V)
Enhancement-mode: V
th
= 0.8 to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
V
DGR
V
GSS
I
D
I
DP
100
V
Drain-gate voltage (R
GS
= 20 k
)
100
V
Gate-source voltage
±20
V
DC
5
Drain current
Pulse
20
A
Drain power dissipation
(1-device operation, Ta = 25°C)
P
D
2.2
W
Ta = 25°C
4.4
Drain power dissipation
(4-device operation)
Tc = 25°C
P
DT
28
W
Single Pulse avalanche energy
(Note 1)
E
AS
180
mJ
Avalanche current
I
AR
5
A
1-device
operation
E
AR
0.22
Repetitive avalanche
energy
(Note 2) 4-device
operation
E
ART
0.44
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note 1: Condition for avalanche energy (single pulse) measurement
V
DD
= 25 V, starting T
ch
= 25°C, L = 11.6 mH, R
G
= 25
, I
AR
= 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-32C1D
Weight: 3.9 g (typ.)
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