參數(shù)資料
型號(hào): MP4304
廠商: Toshiba Corporation
英文描述: TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
中文描述: 東芝功率晶體管模塊硅npn型外延式(高增益功率晶體管在1 4)
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 140K
代理商: MP4304
MP4304
2002-11-20
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
MP4304
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Small package by full molding (SIP 12 pin)
High collector power dissipation (4 devices operation)
: P
T
= 4.4 W (Ta = 25°C)
High collector current: I
C (DC)
= 3 A (max)
High DC current gain: h
FE
= 600 (min) (V
CE
= 2 V, I
C
= 1 A)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
80
V
Collector-emitter voltage
80
V
Emitter-base voltage
7
V
DC
3
Collector current
Pulse
5
A
Continuous base current
0.5
A
Collector power dissipation
(1 device operation)
P
C
2.2
W
Collector power dissipation
(4 devices operation)
P
T
4.4
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32C1B
Weight: 3.9 g (typ.)
5
12
1
6
2
3
4
8
7
9
10
11
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