參數(shù)資料
型號: MP4304
廠商: Toshiba Corporation
英文描述: TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
中文描述: 東芝功率晶體管模塊硅npn型外延式(高增益功率晶體管在1 4)
文件頁數(shù): 3/5頁
文件大小: 140K
代理商: MP4304
MP4304
2002-11-20
3
Collector current I
C
(A)
h
FE
– I
C
D
F
Base current I
B
(mA)
V
CE
– I
B
C
C
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
C
C
Base-emitter voltage V
BE
(V)
I
C
– V
BE
C
C
Collector current I
C
(A)
V
CE (sat)
– I
C
Collector current I
C
(A)
V
BE (sat)
– I
C
B
V
B
C
V
C
0.01
55
25
Ta = 100°C
0.03
0.1
0.3 0.5
1
3
5
0.03
0.05
0.1
0.3
0.5
1
3
Common emitter
IC/IB = 100
0
0
Common emitter
VCE = 1 V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.8
1.2
2.0
2.4
2.8
3.2
1.6
55
25
Ta = 100°C
IC = 3 A
Common emitter
Ta = 25°C
0
0.3
2
1
0.5
0.1
1
3
10
30
100
300
1000
0.1
0.2
0.3
0.4
0.5
0.1
0.01
Common emitter
IC/IB = 100
0.03
0.1
0.3 0.5
1
3
5
0.3
0.5
1
3
5
10
100
25
Ta =
55°C
0
0
Common
emitter
Ta = 25°C
1
2
3
4
5
6
7
0.5
1
1.5
2
2.5
3
IB = 0.5 mA
1
2
5
10
20
30
0.01
0.03
0.1
0.3
1
3
100
300
1000
3000
Common emitter
VCE = 1 V
Ta =
55°C
25
100
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