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參數(shù)資料
| 型號(hào)： | MP4304 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) |
| 中文描述： | 東芝功率晶體管模塊硅npn型外延式（高增益功率晶體管在1 4） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 140K |
| 代理商： | MP4304 |
MP4304
2002-11-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
Σ
R
th (j-a)
28.4
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 80 V, I
E
= 0 A
―
―
10
μA
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0 A
―
―
10
μA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 1 mA, I
E
= 0 A
80
―
―
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0 A
80
―
―
V
h
FE (1)
V
CE
= 2 V, I
C
= 1 A
600
―
―
DC current gain
h
FE (2)
V
CE
= 2 V, I
C
= 2 A
150
―
―
―
Collector-emitter
V
CE (sat)
I
C
= 1.5 A, I
B
= 15 mA
―
0.25
0.5
Saturation voltage
Base-emitter
V
BE (sat)
I
C
= 1.5 A, I
B
= 15 mA
―
―
1.2
V
Transition frequency
f
T
V
CE
= 2 V, I
C
= 0.1 A
―
85
―
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
―
50
―
pF
Turn-on time
t
on
―
0.4
―
Storage time
t
stg
―
2.6
―
Switching time
Fall time
t
f
I
B1
=
I
B2
= 15 mA, duty cycle
≤
1%
―
1.3
―
μs
Flyback-Diode Rating and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Maximum forward current
I
FM
―
―
―
3
A
Reverse current
I
R
V
R
= 80 V
―
―
0.4
μA
Reverse voltage
V
R
I
R
= 100 μA
80
―
―
V
Forward voltage
V
F
I
F
= 1 A
―
―
1.5
V
I
B
20 μs
V
CC
= 30 V
Output
2
I
B2
I
B1
Input
I
B
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