參數(shù)資料
型號(hào): MMDFS3P303R2
廠商: MOTOROLA INC
元件分類: 小信號(hào)晶體管
英文描述: 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 8/12頁(yè)
文件大?。?/td> 257K
代理商: MMDFS3P303R2
MMDFS3P303
5
Motorola TMOS Product Preview Data
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
5.0
30
–10
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1200
800
1000
600
QG, TOTAL GATE CHARGE (nC)
14
0
6.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0
2.5
2.0
1.5
1.0
0.5
0
0.2
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.1
0.01
TJ, STARTING JUNCTION TEMPERATURE (°C)
50
150
25
350
300
50
0
1.0
C,
CAP
ACIT
ANCE
(pF)
V
400
200
0
– 5.0
0
10
4.0
8.0
12
10
0.4
0.8
1.0
,DRAIN
CURRENT
(AMPS)
I D
10
1.0
75
100
125
100
E
AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
15
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
GS
t,TIME
(ns)
I
,SOURCE
CURRENT
(AMPS)
S
100
10
100
10
8.0
150
200
250
A
V
ALANCHE
ENERGY
(mJ)
ID = 3.5 A
TJ = 25°C
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
ID = 3.5 A
TJ = 25°C
VDS
VGS
QT
Q2
Q1
Q3
td(off)
td(on)
tr
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
VGS = 12 V
SINGLE PULSE
TA = 25°C
VGS
VDS
0
25
20
10
20
25
1.0
10 ms
1.0 ms
VGS = 0
VDS = 0
15
5.0
2.0
6.0
10
0.6
450
400
VGS = 10 V
TJ = 25°C
ID = 2.0 A
VDD = 15 V
tf
V
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
DS
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