參數(shù)資料
型號(hào): MMDFS3P303R2
廠商: MOTOROLA INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 257K
代理商: MMDFS3P303R2
MMDFS3P303
3
Motorola TMOS Product Preview Data
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (4) (5)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
V(BR)DSS
30
27
Vdc
mV/
°C
Zero Gate Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
Gate Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (5)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.7
3.5
Vdc
mV/
°C
Static Drain–Source Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
0.085
0.130
0.100
0.160
W
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
gFS
5.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
405
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
200
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
55
SWITCHING CHARACTERISTICS (6)
Turn–On Delay Time
(V
20 Vd
I
2 0 Ad
td(on)
12.5
25
ns
Rise Time
(VDD = 20 Vdc, ID = 2.0 Adc,
VGS =10Vdc
tr
16
30
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 )
td(off)
50
90
Fall Time
G
)
tf
35
65
Turn–On Delay Time
(V
20 Vd
I
2 0 Ad
td(on)
19
ns
Rise Time
(VDD = 20 Vdc, ID = 2.0 Adc,
VGS =4 5Vdc
tr
36
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
27
Fall Time
G
)
tf
31
Gate Charge
(V
20 Vd
I
3 5 Ad
QT
14
25
nC
(VDS = 20 Vdc, ID = 3.5 Adc,
Q1
1.8
( DS
, D
,
VGS = 10 Vdc)
Q2
4.5
Q3
2.85
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On–Voltage (5)
(IS = 1.7 Adc, VGS = 0 Vdc)
VSD
0.9
1.2
V
Reverse Recovery Time
(V
0 V I
3 5 A
trr
26.6
ns
(VGS = 0 V, IS = 3.5 A,
ta
18.8
( GS
, S
,
dIS/dt = 100 A/
s)
tb
7.8
Reverse Recovery Stored Charge
QRR
0.03
C
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Maximum Instantaneous Forward Voltage (5)
I
100
Ad
VF
TJ = 25°C
TJ = 125°C
Volts
IF = 100 mAdc
IF = 3.0 Adc
IF = 6.0 Adc
0.28
0.42
0.50
0.13
0.33
0.45
Maximum Instantaneous Reverse Current (5)
V30 V
IR
TJ = 25°C
TJ = 125°C
mA
VR = 30 V
250
25
mA
Maximum Voltage Rate of Change
VR = 30 V
dV/dt
10,000
V/
ms
(4) Negative sign for P–channel device omitted for clarity
(5) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(6) Switching characteristics are independent of operating junction temperature.
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