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參數(shù)資料
| 型號： | MMDFS3P303R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 257K |
| 代理商： | MMDFS3P303R2 |
MMDFS3P303
2
Motorola TMOS Product Preview Data
THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET
Thermal Resistance — Junction–to–Ambient (1) — MOSFET
RqJA
201
°C/W
Thermal Resistance — Junction–to–Ambient (2) — MOSFET
RqJA
105
Thermal Resistance — Junction–to–Ambient (3) — MOSFET
RqJA
62.5
Thermal Resistance — Junction–to–Ambient (1) — Schottky
RqJA
197
Thermal Resistance — Junction–to–Ambient (2) — Schottky
RqJA
97
Thermal Resistance — Junction–to–Ambient (3) — Schottky
RqJA
62.5
Operating and Storage Temperature Range
Tj, Tstg
– 55 to 150
°C
(1) Mounted with minimum recommended pad size, PC Board FR4.
(2) Mounted on 2
″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
(3) Mounted on 2
″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDFS6N303R2 | 功能描述:MOSFET N-CH 30V 6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMDJ3N03BJT | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Power Transistors SO−8 for Surface Mount Applications |
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
| MMDJ-65608EV-30 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-30-E | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
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