參數(shù)資料
型號(hào)： MMDFS3P303R2
廠商： MOTOROLA INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 3500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 257K
代理商： MMDFS3P303R2
MMDFS3P303
4
Motorola TMOS Product Preview Data
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
6.0
5.0
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
5.0
1.5
3.0
2.0
1.0
0
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.7
0.2
0.1
0
ID, DRAIN CURRENT (AMPS)
1.5
1.0
0.18
0.08
0.06
0.04
2.0
–25
25
–50
TJ, JUNCTION TEMPERATURE (°C)
1.2
0.4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
30
0
1000
1.0
15
0
I D
,DRAIN
CURRENT
(AMPS)
I
R
1.0
0
0.5
0.25
0.75
1.0
1.25
1.5
2.0
3.5
4.5
6.0
4.0
6.0
2.5
3.0
3.5
4.0
4.5
5.5
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
100
75
0.8
10
I DSS
,LEAKAGE
(nA)
1.75
,DRAIN
CURRENT
(AMPS)
D
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
R
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
125
150
1.4
1.8
VGS = 10 V
ID = 1.5 A
VGS = 0 V
TJ = 125°C
100
°C
TJ = 25°C
VGS = 4.5 V
10 V
TJ = 25°C
ID = 3.5 A
VDS ≥ 10 V
TJ = – 55°C
100
°C
25
°C
TJ = 25°C
3.3 V
VGS = 2.7 V
4.5 V
5.0 V
2.0
4.0
3.0
3.5 V
100
20
25
4.0
5.0
3.0 V
3.7 V
4.0 V
6.0 V
0.3
0.4
0.5
0.6
2.5
3.0
4.0
5.0
0.14
0.12
0.10
0.16
0.6
1.0
1.6
10 V
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