參數(shù)資料
型號(hào)： MMDF2P02HD
廠商： Motorola, Inc.
英文描述： DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
中文描述： 偶的TMOS功率場(chǎng)效應(yīng)晶體管2.0安培20伏特
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 257K
代理商： MMDF2P02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
—
25
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
—
—
0.118
0.152
0.160
0.180
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
2.0
3.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
420
588
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
—
290
406
Reverse Transfer Capacitance
—
116
232
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
RG = 6.0
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
19
38
ns
Rise Time
(VDS = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
—
66
132
Turn–Off Delay Time
—
25
50
Fall Time
—
37
74
Turn–On Delay Time
RG = 6.0
)
—
11
22
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
—
21
42
Turn–Off Delay Time
—
45
90
Fall Time
—
36
72
Gate Charge
VGS = 10 Vdc)
—
15
20
nC
(VDS = 16 Vdc, ID = 2.0 Adc,
—
1.2
—
—
5.0
—
—
4.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.5
1.24
2.1
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
—
38
—
ns
(VDD = 15 V, IS = 2.0 A,
ta
tb
—
17
—
—
21
—
QRR
—
0.034
—
μ
C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
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