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參數(shù)資料
| 型號： | MMDF3C03HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| 中文描述： | 互補對偶的TMOS功率場效應晶體管30伏 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 272K |
| 代理商： | MMDF3C03HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package —
Saves Board Space
Ideal for Synchronous Rectification
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VGS
ID
Polarity
—
—
N–Channel
P–Channel
N–Channel
P–Channel
—
Value
30
±
20
5.0
3.0
25
15
Unit
Vdc
Vdc
Adc
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current — Continuous
Drain Current — Pulsed
IDM
Apk
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25
°
C (1)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction–to–Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 10 sec.
DEVICE MARKING
D3C03HD
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
MMDF3C03HDR2
13
″
12 mm embossed tape
TJ, Tstg
PD
EAS
–55 to +150
2.0
°
C
Watts
mJ
N–Channel
325
P–Channel
450
62.5
260
R
θ
JA
TL
°
C/W
°
C
Tape Width
Quantity
2500
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MMDF3C03HD/D
SEMICONDUCTOR TECHNICAL DATA
N–Source
N–Gate
P–Source
P–Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
P–G
CASE 751–05, Style 11
SO–8
COMPLEMENTARY
DUAL TMOS POWER FET
30 VOLTS
N–CH RDS(on) = 0.050
P–CH RDS(on) = 0.100
Motorola Preferred Device
N–S
D
P–S
N–G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDF3N02HDR2 | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3NO2HD | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3N02HD | DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| MMDF3N03HD | DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS |
| MMDF3N03HD | Power MOSFET 3 Amps, 30 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N02HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL |
| MMDF3N02HDR2 | 功能描述:MOSFET 20V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N02HDR2G | 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N03HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R |
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