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參數(shù)資料
| 型號： | MMDF3N02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| 中文描述： | 3.8 A, 20 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 188K |
| 代理商： | MMDF3N02HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
20
20
±
20
3.8
2.6
19
2.0
– 55 to 150
405
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 10
mH, RG = 25
)
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
DEVICE MARKING
D3N02
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
MMDF3N02HDR2
13
″
12 mm embossed tape
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Apk
Watts
°
C
mJ
R
θ
JA
TL
62.5
260
°
C/W
°
C
Quantity
2500
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF3N02HD/D
SEMICONDUCTOR TECHNICAL DATA
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
DUAL TMOS
POWER MOSFET
3.0 AMPERES
20 VOLTS
RDS(on) = 0.090 OHM
Motorola Preferred Device
REV 5
相關PDF資料 |
PDF描述 |
|---|---|
| MMDF3NO2HD | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3N02HD | DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| MMDF3N03HD | DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS |
| MMDF3N03HD | Power MOSFET 3 Amps, 30 Volts |
| MMDF3N03HDR2 | Power MOSFET 3 Amps, 30 Volts |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N02HDR2G | 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N03HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R |
| MMDF3N04HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 40 Volts |
| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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