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參數(shù)資料
| 型號(hào)： | MMDF3207 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS |
| 中文描述： | 7800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-06, SO-8 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | MMDF3207 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
WaveFET
devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
Characterized Over a Wide Range of Power Ratings
Logic Level Gate Drive — Can Be Driven by
Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperature
Miniature SO–8 Surface Mount Package —
Saves Board Space
DEVICE MARKING
ORDERING INFORMATION
D3207
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMDF3207R2
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF3207/D
SEMICONDUCTOR TECHNICAL DATA
SOURCE 1
GATE 1
SOURCE 2
GATE 2
TOP VIEW
DRAIN 1
DRAIN 1
DRAIN 2
DRAIN 2
CASE 751–06, Style 13
SO–8
DUAL TMOS
POWER MOSFET
7.8 AMPERES
20 VOLTS
RDS(on) = 33 m
Motorola Preferred Device
S
G
D
1
2
3
4
8
7
6
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDF3C03HD | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| MMDF3N02HDR2 | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3NO2HD | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3N02HD | DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| MMDF3N03HD | DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3C03HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| MMDF3N02HD | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL |
| MMDF3N02HDR2 | 功能描述:MOSFET 20V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N02HDR2G | 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N03HD | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
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