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參數(shù)資料
| 型號： | MMDF2P02E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS |
| 中文描述： | 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 274K |
| 代理商： | MMDF2P02E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
25
—
—
2.2
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
–
2.0
3.8
3.0
–
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
—
—
0.19
0.3
0.25
0.4
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
1.0
2.8
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
340
475
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
—
220
300
Transfer Capacitance
—
75
150
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
RG = 6.0
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
—
20
40
ns
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
—
40
80
Turn–Off Delay Time
—
53
106
Fall Time
—
41
82
Turn–On Delay Time
)
RG = 6.0
—
13
26
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
—
29
58
Turn–Off Delay Time
—
30
60
Fall Time
—
28
56
Gate Charge
VGS = 10 Vdc)
—
10
15
nC
(VDS = 16 Vdc, ID = 2.0 Adc,
—
1.0
—
Q2
Q3
—
3.5
—
—
3.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
trr
ta
tb
QRR
—
1.5
2.0
Vdc
Reverse Recovery Time
See Figure 11
dIS/dt = 100 A/
μ
s)
—
32
64
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
—
19
—
—
12
—
Reverse Recovery Storage Charge
—
0.035
—
μ
C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(3) Switching characteristics are independent of operating junction temperature.
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