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參數(shù)資料
| 型號： | MMBR571LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon High-Frequency Transistors |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 212K |
| 代理商： | MMBR571LT1 |
3
MMBR571LT1 MRF571 MRF5711LT1
MOTOROLA RF DEVICE DATA
Figure 3. Input Capacitance versus
Emitter Base Voltage
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1
C
VBE, BASE–EMITTER VOLTAGE (Vdc)
4
1
3
2
1
2
3
0
0
f = 1 MHz
Cib
C
,
,
Vcb, COLLECTOR–BASE VOLTAGE (Vdc)
2.5
0
2
1.5
1
0.5
0
1
2
3
4
5
6
7
8
9
10
Cob
Ccb
f = 1 MHz
G
0
IC, COLLECTOR CURRENT (mA)
20
16
12
8
4
0
10
20
30
40
50
f = 500 MHz
VCE = 5 V
TYPICAL CHARACTERISTICS
MMBR571LT1
Figure 4. Output Capacitances versus
Collector–Base Voltage
Figure 5. Gain at Noise Figure versus
Collector Current
1 GHz
Figure 6. Noise Figure versus Collector Current
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1
N
0
IC, COLLECTOR CURRENT (mA)
5
4
3
2
1
0
10
20
30
40
50
f = 500 MHz
f = 1 GHz
VCE = 5 V
G
0.2
f, FREQUENCY (GHz)
25
20
15
10
5
0
0.3
0.5
1
1.5
2
N
5
4
3
2
1
0
VCE = 5 V
IC = 10 mA
GNF
NF
25
0.2
f, FREQUENCY (GHz)
20
15
10
5
0.3
0.6
1
2
30
1.5
GUMAX =
|S21|2
(1 – |S11|2)(1 – |S22|2)
GUMAX
|S21|2
VCE = 5 V
IC = 30 mA
G
Figure 7. Gain at Noise Figure and Noise
Figure versus Frequency
Figure 8. Maximum Unilateral Gain and
Insertion Gain versus Frequency
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| MMBR901LT1 | NPN Silicon High-Frequency Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBR901LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR901LT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR911 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR911LT1 | 制造商:Freescale Semiconductor 功能描述: |
| MMBR911LT1G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR |
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