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參數(shù)資料
| 型號： | MMBR571LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon High-Frequency Transistors |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 212K |
| 代理商： | MMBR571LT1 |
MMBR571LT1 MRF571 MRF5711LT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 50
μ
Adc, IC = 0)
Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
10
12
—
Vdc
20
—
—
Vdc
2.5
—
—
Vdc
μ
Adc
—
—
10
DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
50
—
300
—
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
Current Gain–Bandwidth Produc
(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
(VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
FUNCTIONAL TESTS
MMBR571LT1
MRF5711LT1, MRF571
Ccb
—
—
0.7
0.75
1.0
1.0
pF
MMBR571LT1
MRF5711LT1, MRF571
fT
—
—
8.0
8.0
—
—
GHz
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 6.0 Vdc)
Noise Figure
(IC = 10 mAdc, VCE = 6.0 Vdc)
MRF571
MRF571
f = 0.5 GHz
f = 1.0 GHz
GNF
—
10
16.5
12
—
—
dB
MRF571
MRF571
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
NF
—
—
—
1.0
1.5
2.8
—
2.0
—
dB
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBR571LT1
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
(IC = 10 mA, VCE = 6.0 Vdc)
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
MRF5711LT1
GNF
—
—
—
16.5
10.5
13.5
—
—
—
dB
MMBR571LT1
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
(IC = 10 mAdc, VCE = 6.0 Vdc)
Noise Figure
(VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
Power Gain in 50
System (VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
NF
—
—
—
2.0
2.6
2.2
—
—
—
dB
MRF5711LT1
NFmin
—
1.6
—
dB
MRF5711LT1
|S21|2
9.0
10
—
dB
Figure 1. Maximum Available Gain
versus Frequency
Figure 2. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
25
20
15
10
5
0
0.4
0.6
1
2
3
f, FREQUENCY (GHz)
G
VCE = 5 V
IC = 30 mA
GAMAX
|S21|
|S12|
(k
(k2– 1) ), k
1
10
8
6
4
2
0
0
IC, COLLECTOR CURRENT (mA)
f
10
20
30
40
50
60
70
80
90
100
VCE = 5 V
f = 1 GHz
TYPICAL CHARACTERISTICS
MMBR571LT1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBR901LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR901LT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR911 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR911LT1 | 制造商:Freescale Semiconductor 功能描述: |
| MMBR911LT1G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR |
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