參數(shù)資料
型號: MMBR911
廠商: Motorola, Inc.
英文描述: NPN Silicon High-Frequency Transistor
中文描述: NPN硅高頻晶體管
文件頁數(shù): 1/6頁
文件大?。?/td> 78K
代理商: MMBR911
1
MMBR911LT1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
Motorola small–signal plastic transistor offers superior quality and performance
at low cost.
High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD(max)
12
Vdc
Collector–Base Voltage
20
Vdc
Emitter–Base Voltage
2.0
Vdc
Collector Current — Continuous
60
mA
Power Dissipation @ Tcase = 75
°
C (1)
Derate linearly above Tcase = 75
°
C
333
4.44
mW
mW/
°
C
Storage Temperature
Tstg
TJmax
–55 to +150
°
C
Maximum Junction Temperature
150
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
225
°
C/W
DEVICE MARKING
MMBR911LT1 = 7P
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR911LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 60 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
REV 8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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