- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371122 > MMBR571LT1 (MOTOROLA INC) NPN Silicon High-Frequency Transistors PDF資料下載
參數(shù)資料
| 型號： | MMBR571LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon High-Frequency Transistors |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 212K |
| 代理商： | MMBR571LT1 |
1
MMBR571LT1 MRF571 MRF5711LT1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost.
High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VEBO
IC
PD(max)
Value
10
20
3.0
80
Unit
Vdc
Vdc
Vdc
mA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ Tcase = 75
°
C
MMBR571LT1, MRF5711LT1
Derate linearly above Tcase = 75
°
C @
Total Device Dissipation (1) @ TC = 75
°
C
Derate above 75
°
C
Operating and Storage Temperature
0.33
4.44
0.58
7.73
–55 to
+150
W
mW/
°
C
Watts
mW/
°
C
°
C
MRF571
PD
Tstg
THERMAL CHARACTERISTICS
Rating
Symbol
R
θ
JC
Max
225
Unit
°
C/W
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1
Thermal Resistance, Junction to Case
Maximum Junction Temperature
DEVICE MARKING
MMBR571LT1 = 7X
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
MRF571
R
θ
JC
TJmax
130
150
°
C/W
°
C
MRF5711LT1 = 02
Order this document
by MMBR571LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 80 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR571LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5711LT1
CASE 317–01, STYLE 2
MACRO–X
MRF571
REV 8
相關PDF資料 |
PDF描述 |
|---|---|
| MMBR901LT1 | NPN Silicon High-Frequency Transistor |
| MMBR901LT3 | NPN Silicon High-Frequency Transistor |
| MMBR911LT1 | NPN Silicon High-Frequency Transistor |
| MMBR911 | NPN Silicon High-Frequency Transistor |
| MMBR920L | NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBR901LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR901LT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR911 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR911LT1 | 制造商:Freescale Semiconductor 功能描述: |
| MMBR911LT1G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。