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參數(shù)資料
| 型號： | MMBR901LT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon High-Frequency Transistor |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 90K |
| 代理商： | MMBR901LT3 |
2–1
MMBR901LT1, T3 MRF9011LT1
Motorola, Inc. 1997
The RF Line
!"
Designed primarily for use in high–gain, low–noise small–signal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
High Current–Gain — Bandwidth Product
Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 1.8 dB (Typ) (MRF9011LT1)
NF(matched)
= 1.9 dB (Typ) (MMBR901LT1, T3)
High Power Gain —
Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
Gpe(matched)
= 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
Guaranteed RF Parameters (MRF9011LT1)
Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance
Lower Package Parasitics
High Gain
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
15
Vdc
Collector–Base Voltage
25
Vdc
Emitter–Base Voltage
2.0
Vdc
Collector Current — Continuous
30
mAdc
Power Dissipation @ TC = 75
°
C (1)
MMBR901LT1, T3;
MRF9011LT1
Derate above 25
°
C
PD(max)
0.300
4.00
Watt
mW/
°
C
Storage Temperature Range
All
Tstg
TJ(max)
–55 to +150
°
C
Maximum Junction Temperature
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Storage Temperature
Tstg
R
θ
JC
150
°
C
Thermal Resistance, Junction to Case
MRF9011LT1, MMBR901LT1, T3
200
°
C/W
DEVICE MARKING
MRF9011LT1 = 01
MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MMBR901LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 30 mA
SURFACE MOUNTED
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE, MRF9011LT1
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE, MMBR901LT1, T3
REV 8
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