STATIC ELECTRICAL CHARACTERISTICS LIN Receiv" />
參數(shù)資料
型號: MM908E625ACEK
廠商: Freescale Semiconductor
文件頁數(shù): 48/49頁
文件大?。?/td> 0K
描述: IC HALF-BRIDGE QUAD 54-SOIC
標(biāo)準(zhǔn)包裝: 26
應(yīng)用: 自動鏡像控制
核心處理器: HC08
程序存儲器類型: 閃存(16 kB)
控制器系列: 908E
RAM 容量: 512 x 8
接口: SCI,SPI
輸入/輸出數(shù): 13
電源電壓: 8 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 54-BSSOP(0.295",7.50mm 寬)裸露焊盤
包裝: 管件
供應(yīng)商設(shè)備封裝: 54-SOICW-EP
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
908E625
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
LIN Receiver
Recessive
Dominant
Threshold
Input Hysteresis
VIH
VIL
VITH
VIHY
0.6 VLIN
0.0
0.01 VSUP
VSUP/2
VSUP
0.4 VLIN
0.1 VSUP
V
LIN Wake-up Threshold
VWTH
VSUP/2
V
HIGH SIDE OUTPUT (HS)
Switch ON Resistance @ TJ = 25 °C with ILOAD = 1.0 A
RDS(ON)HS
600
700
m
Ω
High Side Over-current Shutdown
IHSOC
3.9
7.0
A
HALF-BRIDGE OUTPUTS (HB1:HB4)
Switch ON Resistance @ TJ = 25 °C with ILOAD = 1.0 A
High Side
Low Side
RDS(ON)HB_HS
RDS(ON)HB_LS
425
400
500
m
Ω
High Side Over-current Shutdown
IHBHSOC
4.0–7.5
A
Low Side Over-current Shutdown
IHBLSOC
2.8–7.5
A
Low Side Current Limitation @ TJ = 25°C
Current Limit 1 (CLS2 = 0, CLS1 = 1, CLS0 = 1)
Current Limit 2 (CLS2 = 1, CLS1 = 0, CLS0 = 0)
Current Limit 3 (CLS2 = 1, CLS1 = 0, CLS0 = 1)
Current Limit 4 (CLS2 = 1, CLS1 = 1, CLS0 = 0)
Current Limit 5 (CLS2 = 1, CLS1 = 1, CLS0 = 1)
ICL1
ICL2
ICL3
ICL4
ICL5
210
300
450
600
55
260
370
550
740
315
440
650
880
mA
Half-bridge Output High Threshold for BEMF Detection
VBEMFH
–-30
0
V
Half-bridge Output Low Threshold for BEMF Detection
VBEMFL
–-60
-5.0
mV
Hysteresis for BEMF Detection
VBEMFHY
–30
mV
Low Side Current-to-Voltage Ratio (VADOUT [V]/IHB [A])
CSA = 1
CSA = 0
RATIOH
RATIOL
7.0
1.0
12.0
2.0
14.0
3.0
V/A
SWITCHABLE VDD OUTPUT (PH.D.)
Over-current Shutdown Threshold
IHVDDOCT
24
30
40
mA
VSUP DOWN-SCALER
Voltage Ratio (RATIOVSUP = VSUP /VADOUT)RATIOVSUP
4.8
5.1
5.35
INTERNAL DIE TEMPERATURE SENSOR
Voltage/Temperature Slope
STTOV
–19
mV/°C
Output Voltage @ 25 °C
VT25
1.7
2.1
2.5
V
HALL-EFFECT SENSOR INPUTS (H1:H3)
Output Voltage
VSUP < 16.2 V
VSUP > 16.2 V
VHALL1
VHALL2
VSUP-1.2
15
V
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 specification for characteristics of the
microcontroller chip. Characteristics noted under conditions 9.0 V
≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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