LOGIC COMMANDS AND REGISTERS High Side On/" />
參數(shù)資料
型號: MM908E625ACEK
廠商: Freescale Semiconductor
文件頁數(shù): 25/49頁
文件大?。?/td> 0K
描述: IC HALF-BRIDGE QUAD 54-SOIC
標(biāo)準(zhǔn)包裝: 26
應(yīng)用: 自動鏡像控制
核心處理器: HC08
程序存儲器類型: 閃存(16 kB)
控制器系列: 908E
RAM 容量: 512 x 8
接口: SCI,SPI
輸入/輸出數(shù): 13
電源電壓: 8 V ~ 18 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 54-BSSOP(0.295",7.50mm 寬)裸露焊盤
包裝: 管件
供應(yīng)商設(shè)備封裝: 54-SOICW-EP
Analog Integrated Circuit Device Data
Freescale Semiconductor
31
908E625
FUNCTIONAL DEVICE OPERATION
LOGIC COMMANDS AND REGISTERS
High Side On/Off Bits (HBx_H)
These read/write bits turn on the high side MOSFETs.
Reset clears the HBx_H bits.
1 = High side MOSFET turned on for half-bridge output
x
0 = High side MOSFET turned on for half-bridge output
x
HALF-BRIDGE CURRENT LIMITATION
Each low side MOSFET offers a current limit or constant
current feature. This features is realized by a pulse width
modulation on the low side MOSFET. The pulse width
modulation on the outputs is controlled by the FGEN input
and the load characteristics. The FGEN input provides the
PWM frequency, whereas the duty cycle is controlled by the
load characteristics.
The recommended frequency range for the FGEN and the
PWM is 0.1 kHz to 20 kHz.
Functionality
Each low side MOSFET switches off if a current above the
selected current limit was detected. The 908E625 offers five
different current limits. Refer to Table 10 for current limit
values. The low side MOSFET switches on again if a rising
edge on the FGEN input was detected (Figure 18).
Figure 18. Half-bridge Current Limitation
Coil Current
Half-Bridge
Low-Side Output
FGEN Input
(MCU PWM
Signal)
Minimum 50 μs
H-Bridge low-side
MOSFET will be switched
off if select current limit is
reached.
H-Bridge low-side
MOSFET will be turned on
with each rising edge of
the FGEN input.
t
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