參數(shù)資料
型號(hào)： MGF0951P
元件分類： 功率晶體管
英文描述： S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封裝： PLASTIC, LEADLESS PACKAGE-3
文件頁數(shù)： 34/42頁
文件大?。?/td> 1232K
代理商： MGF0951P
MGF0951P
S PARAMETERS
(Ta=25°C,VD=10V,ID=200mA)
(4/42)
Mitsubishi Electric
Mar./2005
f
S Parameter(TYP.)
(MHz)
S11
S21
S12
S22
K
MSG/MAG
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
(dB)
600
0.847
-98.9
7.176
117.6
0.039
44.1
0.186
-115.6
0.476
22.7
800
0.827
-115.4
5.972
106.5
0.043
37.8
0.207
-126.0
0.564
21.4
1000
0.807
-127.9
5.076
97.3
0.046
34.1
0.225
-133.2
0.666
20.4
1200
0.797
-137.6
4.392
89.6
0.048
31.5
0.240
-137.7
0.767
19.6
1400
0.785
-145.0
3.867
82.8
0.051
29.6
0.256
-140.5
0.855
18.8
1600
0.777
-151.3
3.450
76.6
0.052
29.0
0.270
-142.7
0.951
18.2
1800
0.772
-156.1
3.127
71.0
0.053
28.2
0.284
-143.5
1.027
16.7
2000
0.763
-160.3
2.865
65.7
0.056
28.0
0.295
-144.3
1.099
15.2
2200
0.754
-164.1
2.655
60.8
0.058
27.2
0.303
-144.8
1.173
14.1
2400
0.745
-167.7
2.485
55.8
0.060
27.4
0.314
-145.3
1.223
13.3
2600
0.733
-171.3
2.342
50.9
0.064
26.7
0.325
-145.4
1.269
12.5
2800
0.720
-175.0
2.223
46.1
0.067
25.9
0.335
-145.3
1.312
11.9
3000
0.709
-178.8
2.114
41.4
0.070
25.4
0.342
-145.4
1.358
11.3
3200
0.698
177.4
2.023
36.7
0.073
24.8
0.346
-146.1
1.399
10.7
3400
0.689
173.5
1.939
31.8
0.076
23.9
0.350
-147.5
1.426
10.2
3600
0.678
169.7
1.867
27.2
0.080
22.8
0.351
-148.9
1.451
9.7
3800
0.669
166.0
1.807
22.6
0.084
22.0
0.351
-149.5
1.462
9.3
4000
0.660
162.4
1.756
18.1
0.089
21.6
0.346
-150.5
1.458
8.9
4200
0.651
158.4
1.715
13.4
0.095
20.2
0.340
-152.0
1.451
8.6
4400
0.641
154.1
1.677
8.5
0.101
18.6
0.334
-154.4
1.442
8.3
4600
0.630
149.4
1.640
3.6
0.108
16.8
0.332
-156.5
1.413
8.0
4800
0.619
144.6
1.604
-1.2
0.114
15.0
0.328
-158.4
1.410
7.7
5000
0.608
140.0
1.572
-6.1
0.122
12.9
0.323
-160.6
1.398
7.4
5200
0.599
135.2
1.543
-11.1
0.129
10.5
0.318
-163.5
1.378
7.1
5400
0.589
130.4
1.512
-16.2
0.137
7.9
0.316
-167.3
1.356
6.9
5600
0.577
125.2
1.486
-21.3
0.146
5.1
0.316
-170.5
1.337
6.6
5800
0.563
120.3
1.466
-26.4
0.156
2.2
0.314
-172.9
1.305
6.4
6000
0.549
115.0
1.453
-31.6
0.165
-0.9
0.307
-175.5
1.287
6.2
6200
0.533
108.4
1.440
-37.1
0.177
-4.6
0.300
-178.9
1.263
6.0
6400
0.518
101.4
1.427
-42.9
0.189
-8.3
0.293
177.0
1.243
5.8
6600
0.505
93.1
1.417
-48.9
0.201
-12.7
0.286
173.4
1.222
5.6
6800
0.497
84.1
1.403
-55.3
0.213
-17.2
0.269
169.2
1.206
5.4
7000
0.501
74.8
1.386
-61.9
0.226
-22.5
0.245
162.5
1.185
5.3
Fig1.OUTLINE DRAWING
4.
00
3.40
0.
8
9
4
.5
0
a
09
5
1
P
L
ot
N
o.
b
TOP
(0
.6
0)
SIDE
0.45
2.26
1.48
a:Gate
b:Dorain
c:Source Unit:mm
3.
0
1.08
2.
6
0
b
1.
4
0
c
a
BOTTOM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGF0951P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0952P 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
MGF0952P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
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