參數(shù)資料
型號(hào): MGF0951P
元件分類: 功率晶體管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封裝: PLASTIC, LEADLESS PACKAGE-3
文件頁(yè)數(shù): 13/42頁(yè)
文件大?。?/td> 1232K
代理商: MGF0951P
MITSUBISHI ELECTRIC CORPORATION
Mar./2005
(20/42)
MGF0951P RF TEST DATA
VD=10V,Idq=0.2A
IM3,IM5 v.s. Pin
IM3,IM5 v.s. Po
-70
-60
-50
-40
-30
-20
-10
0
10
15
20
25
30
Po(S.C.L.)(dBm)
IM
3
,I
M
5
(d
B
c
)
IM3 High
IM5 High
IM3 Low
IM5 Low
f1=2.50GHz
f2=2.51GHz
IM3,IM5 v.s. Po
-70
-60
-50
-40
-30
-20
-10
0
10
15
20
25
30
Po(S.C.L.)(dBm)
IM
3
,I
M
5
(d
B
c
)
IM3 High
IM5 High
IM3 Low
IM5 Low
f1=2.60GHz
f2=2.61GHz
IM3,IM5 v.s. Po
-70
-60
-50
-40
-30
-20
-10
0
10
15
20
25
30
Po(S.C.L.)(dBm)
IM
3
,I
M
5
(d
B
c
)
IM3 High
IM5 High
IM3 Low
IM5 Low
f1=2.70GHz
f2=2.71GHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGF0951P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
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MGF0952P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)