參數(shù)資料
型號(hào): MGF0951P
元件分類: 功率晶體管
英文描述: S BAND, GaAs, N-CHANNEL, RF POWER, JFET
封裝: PLASTIC, LEADLESS PACKAGE-3
文件頁(yè)數(shù): 23/42頁(yè)
文件大?。?/td> 1232K
代理商: MGF0951P
MGF0951P TYPICAL CHARACTERISTICS
(3/42)
Mitsubishi Electric
Mar./2005
IM3 vs.Po
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
15
20
25
30
Po (Total) (dBm)
IM
3
(d
B
c
)
Vds=10V
Ids(RFoff)=200mA
f1=2.15GHz
f2=2.16GHz
IM3
IM5
相關(guān)PDF資料
PDF描述
MGF4314E-01 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MGF4318E-30 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MGFC4416D-02 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MGF4315C-01 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
MGF4316C-01 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGF0951P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0952P 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
MGF0952P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)