| 型號: | MGF0951P |
| 元件分類: | 功率晶體管 |
| 英文描述: | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝: | PLASTIC, LEADLESS PACKAGE-3 |
| 文件頁數(shù): | 19/42頁 |
| 文件大?。?/td> | 1232K |
| 代理商: | MGF0951P |

相關PDF資料 |
PDF描述 |
|---|---|
| MGF4314E-01 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4318E-30 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGFC4416D-02 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4315C-01 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGF4316C-01 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0951P_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0952P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] |
| MGF0952P_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0953P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0953P_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |