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參數(shù)資料
| 型號： | MGB19N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Ignition IGBT 19 Amps, 350 Volts(19A，350V鉗位電壓，點火絕緣柵雙極型晶體管（D2PAK封裝）) |
| 中文描述： | 點火IGBT一十九安培，350伏特，（第19A，350V鉗位電壓，點火絕緣柵雙極型晶體管（采用D2PAK封裝）） |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MGB19N35CL |
MGP19N35CL, MGB19N35CL
http://onsemi.com
5
20
10
25
5
15
0
–50
30
TEMPERATURE (
°
C)
I
L = 2.0 mH
50
75
25
0
100
–25
125
150
175
VCC = 50 V
VGE = 5.0 V
RG = 1000
L = 3.0 mH
L = 6.0 mH
0
20
6
4
2
I
0
30
INDUCTOR (mH)
5
10
15
25
8
10
T = 25
°
C
T = 150
°
C
VCC = 50 V
VGE = 5.0 V
RG = 1000
10
S
μ
S
0
–50
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Switching Speed vs. Case
Temperature
Figure 8. Switching Speed vs. Collector
Current
S
μ
S
Figure 9. Minimum Open Secondary Latch
Current vs. Inductor
Figure 10. Minimum Open Secondary Latch
Current vs. Temperature
Figure 11. Typical Open Secondary Latch vs.
Inductor
INDUCTOR (mH)
Figure 12. Typical Open Secondary Latch vs.
Temperature
TEMPERATURE (
°
C)
I
I
14
TC, CASE TEMPERATURE (
°
C)
4
6
8
12
0
6
8
4
10
2
12
14
16
0
4
5
3
2
6
1
9
10
2
50
75
25
0
100
–25
125
150
VCC = 300 V
VGE = 5.0 V
RG = 1000
IC = 10 A
L = 300
μ
H
10
0
14
4
6
8
12
2
20
0
30
5
10
15
25
7
8
T = 25
°
C
T = 150
°
C
VCC = 50 V
VGE = 5.0 V
RG = 1000
L = 2.0 mH
VCC = 50 V
VGE = 5.0 V
RG = 1000
L = 3.0 mH
L = 6.0 mH
–50
50
75
25
0
100
–25
125
150
175
20
0
30
5
10
15
25
td(off)
tf
td(off)
tf
VCC = 300 V
VGE = 5.0 V
RG = 1000
TJ = 150
°
C
L = 300
μ
H
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| MGP19N35CL | Ignition IGBT 19 Amps, 350 Volts(19A，350V鉗位電壓，點火絕緣柵雙極型晶體管（TO-220封裝）) |
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參數(shù)描述 |
|---|---|
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
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