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參數(shù)資料
| 型號(hào)： | MGB19N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Ignition IGBT 19 Amps, 350 Volts(19A，350V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（D2PAK封裝）) |
| 中文描述： | 點(diǎn)火IGBT一十九安培，350伏特，（第19A，350V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（采用D2PAK封裝）） |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 72K |
| 代理商： | MGB19N35CL |
MGP19N35CL, MGB19N35CL
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
(unless otherwise noted)
2.5
1.0
3.0
0.5
2.0
0.0
1.5
25
20
15
10
5
0
30
35
40
45
50
55
60
10000
1000
100
10
00
120
60
40
20
140
180
80
100
160
1
0
40
6
10
4
2
I
0
60
20
30
50
8
1
3
5
7
1.0
0.5
0.0
1.5
2.0
2.5
0
40
6
10
4
2
I
0
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
0
2
1.5
1
0.5
2.5
3
3.5
Figure 3. Transfer Characteristics
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. Collector–to–Emitter Saturation
Voltage vs. Junction Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
V
I
Figure 5. Capacitance Variation
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 6. Threshold Voltage vs. Temperature
TEMPERATURE (
°
C)
C
T
60
–50
50
75
25
0
100
–25
125
VGE = 10.0 V
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
20
30
50
8
1
3
5
7
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
TJ = 25
°
C
TJ = 150
°
C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
VCE = 10 V
TJ = 25
°
C
TJ = 150
°
C
TJ = –40
°
C
4
4.5
5
150
VGE = 5.0 V
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 5 A
–50
50
75
25
0
100
–25
125
150
Mean + 4
σ
Mean – 4
σ
Mean
IC = 1 mA
Crss
Ciss
Coss
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