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參數(shù)資料
| 型號： | MGB19N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Ignition IGBT 19 Amps, 350 Volts(19A，350V鉗位電壓，點火絕緣柵雙極型晶體管（D2PAK封裝）) |
| 中文描述： | 點火IGBT一十九安培，350伏特，（第19A，350V鉗位電壓，點火絕緣柵雙極型晶體管（采用D2PAK封裝）） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MGB19N35CL |
MGP19N35CL, MGB19N35CL
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
R
θ
JA
TL
0.9
°
C/W
Thermal Resistance, Junction to Ambient
TO–220
D2PAK (Note 1.)
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
275
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
BVCES
IC = 2 mA
TJ = –40
°
C to 175
°
C
320
350
380
VDC
Zero Gate Voltage Collector Current
ICES
VCE = 300 V,
VGE = 0, TJ = 25
°
C
–
1.5
20
μ
ADC
VCE = 300 V,
VGE = 0, TJ = 150
°
C
–
15
40
Reverse Collector–Emitter Leakage Current
IECS
VCE = –24 V
IC = –75 mA
IG = 5 mA
VGE = 10 V
–
–
0.35
1.0
mA
Reverse Collector–Emitter Clamp Voltage
BVCES(R)
BVGES
IGES
RG
RGE
25
33
50
VDC
VDC
μ
ADC
Gate–Emitter Clamp Voltage
17
20
22
Gate–Emitter Leakage Current
384
500
1000
Gate Resistor (Optional)
–
70
–
Gate Emitter Resistor
–
10
20
26
k
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
VGE(th)
IC = 1 mA
VGE = VCE
1.0
1.7
2.1
VDC
Threshold Temperature Coefficient (Negative)
–
–
–
4.4
–
mV/
°
C
Collector–to–Emitter On–Voltage
VCE(on)
IC = 6 A, VGE = 4 V
IC = 10 A, VGE = 4 V
IC = 15 A, VGE = 4 V
–
1.25
1.8
VDC
–
1.5
1.8
–
1.8
2.1
IC = 20 A, VGE = 4 V
IC = 25 A, VGE = 4 V
IC = 10 A,
VGE = 4.5 V,
TJ = 150
°
C
–
2.0
2.3
–
2.25
2.6
Collector–to–Emitter On–Voltage
VCE(on)
–
1.3
1.8
VDC
Forward Transconductance
gfs
VCE = 5 V, IC = 6 A
8.0
15
25
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
VCC
VGE = 0 V
f = 1 MHz
–
1500
1800
pF
Output Capacitance
–
130
160
Transfer Capacitance
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width
300
μ
S, Duty Cycle
–
6.0
8.0
2%.
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