參數資料
型號: MCF5208_07
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: Microprocessor Data Sheet
中文描述: 微處理器數據表
文件頁數: 20/46頁
文件大?。?/td> 480K
代理商: MCF5208_07
MCF5208 ColdFire
Microprocessor Data Sheet, Rev. 1
Electrical Characteristics
Freescale Semiconductor
20
The average chip-junction temperature (T
J
) in
°
C can be obtained from:
Eqn. 1
Where:
T
A
= Ambient Temperature,
°
C
Q
JMA
= Package Thermal Resistance, Junction-to-Ambient, ×C/W
P
D
= P
INT
+ P
I/O
P
INT
= I
DD
×
IV
DD
, Watts - Chip Internal Power
P
I/O
= Power Dissipation on Input and Output Pins — User Determined
For most applications P
I/O
< P
INT
and can be ignored. An approximate relationship between P
D
and T
J
(if
P
I/O
is neglected) is:
Eqn. 2
Solving equations 1 and 2 for K gives:
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from
Equation 3
by measuring
P
D
(at equilibrium) for a known T
A
. Using this value of K, the values of P
D
and T
J
can be obtained by
solving
Equation 1
and
Equation 2
iteratively for any value of T
A
.
5.3
ESD Protection
5.4
DC Electrical Specifications
Table 6. ESD Protection Characteristics
1,
2
NOTES:
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
2
A device is defined as a failure if, after exposure to ESD pulses, the device no longer
meets the device specification requirements. Complete DC parametric and functional
testing is performed per applicable device specification at room temperature followed by
hot temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Unit
ESD Target for Human Body Model
HBM
2000
V
Table 7. DC Electrical Specifications
Characteristic
Symbol
Min
Max
Unit
Core Supply Voltage
IV
DD
1.4
1.6
V
PLL Supply Voltage
PLLV
DD
1.4
1.6
V
CMOS Pad Supply Voltage
EV
DD
3.0
3.6
V
T
J
T
A
P
D
Θ
JMA
×
(
)
+
=
P
D
273
°
C
T
J
+
(
)
-------------K
=
K
P
D
T
A
273
°
C
×
(
)
Q
JMA
P
D
2
×
+
×
=
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