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參數(shù)資料
| 型號： | MC33298DW |
| 廠商： | MOTOROLA INC |
| 元件分類： | 外設及接口 |
| 英文描述： | OCTAL SERIAL SWITCH (SPI Input/Output) |
| 中文描述： | 1 A 8 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO24 |
| 封裝： | PLASTIC, SOP-24 |
| 文件頁數(shù)： | 16/24頁 |
| 文件大?。?/td> | 280K |
| 代理商： | MC33298DW |
MC33298
16
MOTOROLA ANALOG IC DEVICE DATA
Output Voltage Clamping
Each output of the MC33298 incorporates an internal
voltage clamp to provide fast turn–off and transient protection
of the output. Each clamp independently limits the drain to
source voltage to 65 V at drain currents of 0.5 A and keeps
the output transistors from avalanching by causing the
transient energy to be dissipated in the linear mode (see
Figure 19). The total energy (EJ) can be calculated by
multiplying the current area under the current curve (IA)
during the time the clamp is active and the clamp
voltage (VCL).
Characterization of the output clamps, using a single pulse
repetitive method at 0.5 A, indicate the maximum energy to
be 100 mJ at 25
°
C and 25 mJ at 125
°
C per output. Using a
single pulse non–repetitive method at 0.5 A the clamps are
capable of 2.0 Joules at 25
°
C and 0.5 Joules at 125
°
C.
Clamp Energy
(EJ = IA x VCL x t)
Drain Voltage
Time
Current
Area (IA)
Gnd
Drain–to–Source “On”
Voltage (VDS(ON))
VPWR
Drain Current
(ID = 0.5 A)
Drain–to–Source Clamp
Voltage (VCL = 65 V)
Figure 19. Output Voltage Clamping
THERMAL CHARACTERIZATION
Thermal Model
Logic functions take up a very small area of the die and
generate negligible power. In contrast, the output transistors
take up most of the die area and are the primary contributors
of power generation. The thermal model shown in Figure 20
was developed for the MC33298 mounted on a typical PC
board. The model is accurate for both steady state and
transient thermal conditions. The components Rd0, Rd1,
Rd2,..., and Rd7 represent the steady state thermal
resistance of the silicon die for transistor outputs 0, 1, 2, ...,
and 7, while Cd0, Cd1, Cd2, ..., and Cd7 represent
the corresponding thermal capacitance of the silicon
die transistor outputs and plastic. The device area and
die thickness determine the values of these specific
components.
The thermal impedance of the package from the internal
mounting flag to the outside environment is represented by
the terms Rpkg and Cpkg. The steady state thermal resistance
of leads and the PC board make up the steady state package
thermal resistance, Rpkg. The thermal capacitance of the
package is made up of the combined capacitance of the flag
and the PC board. The mold compound was not modeled as
a specific component but is factored into the other overall
component values.
The battery voltage in the thermal model represents the
ambient temperature the device and PC board are subjected
to. The IPWR current source represents the total power
dissipation and is calculated by adding up the power
dissipation of each individual output transistor. This is easily
done by knowing RDS(on) and load current of the
individual outputs.
Very satisfactory steady state and transient results have
been experienced with this thermal model. Tests indicate the
model accuracy to have less than 10% error. Output
interaction with an adjacent output is thought to be the main
contributor to the thermal inaccuracy. Tests indicate little or
no detectable thermal affects caused by distant output
transistors which are isolated by one or more other outputs.
Tests were conducted with the device mounted on a typical
PC board placed horizontally in a 33 cubic inch still air
enclosure. The PC board was made of FR4 material
measuring 2.5
″
by 2.5
″
, having double–sided circuit traces of
1.0 oz. copper soldered to each device pin. The board
temperature was measured with thermal couple soldered to
the board surface one inch away from the center of the
device. The ambient temperature of the enclosure was
measured with a second thermal couple located over the
center and one inch distant from device.
Thermal Performance
Figure 20 shows the worst case thermal component
parameters values for the MC33298 in the 20 pin plastic
power DIP and the SOP–24 wide body surface mount
package. The power DIP package has Pins 5, 6, 15, and 16
connected directly to the lead frame flag. The parameter
values indicated take into account adjacent output cell thermal
pulling effects as well as different output combinations. The
characterization was conducted over power dissipation levels
of 0.7 to 17 W. The junction–to–ambient temperature thermal
resistance was found to be 37
°
C/W with a single output
active (31
°
C/W with all outputs dissipating equal power) and
in conjunction with this, the thermal resistance from junction
to PC board (Rjunction–board) was found to be 27
°
C/W (board
temperature, measured 1
″
from device center). In addition,
the thermal resistance from junction–to–heatsink lead was
found to approximate 10
°
C/W. Devoting additional PC board
metal around the heatsinking pins improved Rpkg from 30
°
to
28
°
C/W.
The SOP–24 package has Pins 5, 6, 7, 8, 17, 18, 19, and
20 of the package connected directly to the lead frame flag.
Characterization was conducted in the same manner as for
the DIP package. The junction–to–ambient temperature
resistance was found to be 40
°
C/W with a single output
active (34
°
C/W with all outputs dissipating equal power) and
the thermal resistance from junction–to–PC board
(Rjunction–board) to be 30
°
C/W (board temperature,
measured 1
″
from device center). The junction–to–heatsink
lead resistance was found again to approximate 10
°
C/W.
Devoting additional PC board metal around the heatsinking
pins for this package improved the Rpkg from 33
°
to 31
°
C/W.
The total power dissipation available is dependent on the
number of outputs enabled at any one time. At 25
°
C the
RDS(on) is 450 m
with a coefficient of 6500 ppm/
°
C. For the
junction temperature to remain below 150
°
C, the maximum
available power dissipation must decrease as the ambient
temperature increases. Figures 21 and 22 depict the per
output limit of current at ambient temperatures necessary for
the plastic DIP and SOP packages respectively when one,
four, or eight outputs are enabled “on.” Figure 23 depicts how
the RDS(on) output value is affected by junction temperature.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| MC33298DWR2 | 功能描述:IC OCTAL SERIAL SWITCH 24-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關 系列:- 標準包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| MC33298P | 功能描述:IC SWITCH SERIAL OCTAL 20-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關 系列:- 標準包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| MC33304P | 制造商:ON Semiconductor 功能描述: |
| MC3330P | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MC33340D | 功能描述:電池管理 18V Max NiCD/NiMH RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
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