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參數(shù)資料
| 型號： | MBM29DL163TD12PBT |
| 廠商： | FUJITSU LTD |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 120 ns, PBGA48 |
| 封裝： | PLASTIC, FBGA-48 |
| 文件頁數(shù)： | 51/76頁 |
| 文件大?。?/td> | 1146K |
| 代理商： | MBM29DL163TD12PBT |
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MBM29DL16XTD/BD-70/90/12
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RY/BY output pin will be at Hi-Z and the DQ7 bit will be at logic “1”, and DQ6 will stop toggling. The user must
use the address of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been
suspended. Further writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ2 to toggle. (See the section on DQ2.)
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate
command sequence for Program. This program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Program mode except that the data must
be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erase-
suspended Program operation is detected by the RY/BY output pin, Data polling of DQ7 or by the Toggle Bit I
(DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address
while DQ6 can be read from any address within bank being erase-suspended.
To resume the operation of Sector Erase, the Resume command (30H) should be written to the bank being
erase suspended. Any further writes of the Resume command at this point will be ignored. Another Erase
Suspend command can be written after the chip has resumed erasing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL163TD-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TD-70PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TD-70PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TD-90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TD-90PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
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