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參數(shù)資料
| 型號(hào)： | MBM29DL163TD12PBT |
| 廠商： | FUJITSU LTD |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 120 ns, PBGA48 |
| 封裝： | PLASTIC, FBGA-48 |
| 文件頁(yè)數(shù)： | 1/76頁(yè) |
| 文件大?。?/td> | 1146K |
| 代理商： | MBM29DL163TD12PBT |
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DS05-20874-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
× 8/1M × 16) BIT Dual Operation
MBM29DL16XTD/BD -70/90/12
s FEATURES
0.33
m Process Technology
Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Single 3.0 V read, program, and erase
Minimizes system level power requirements
(Continued)
s PRODUCT LINE UP
s PACKAGES
Part No.
MBM29DL16XTD/MBM29DL16XBD
Ordering Part No.
VCC = 3.3 V
+0.3 V
–0.3 V
70
—
VCC = 3.0 V
+0.6 V
–0.3 V
—90
12
Max. Address Access Time (ns)
70
90
120
Max. CE Access Time (ns)
70
90
120
Max. OE Access Time (ns)
30
35
50
48-pin plastic TSOP (I)
(FPT-48P-M19)
48-pin plastic TSOP (I)
(FPT-48P-M20)
48-pin plastic FBGA
(BGA-48P-M13)
Marking Side
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL163TD-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TD-70PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TD-70PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TD-90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163TD-90PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
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